http://arxiv.org/abs/2112.01691
We report the performance of a radiation hardened SRI 4K$\times$2K CMOS image sensor at temperatures down to 140 K. A biasing scheme to suppress readout glow during long exposures is highly effective so that the 0.077 $\mathrm{m\mathrm{e^-}/s}$ dark current floor is reached at 160 K, rising to 1 $\mathrm{m}\mathrm{e^-}\mathrm{s}$ at 184 K. We examine the trade-off between readout speed and read noise, finding that 1.43 $\mathrm{e^-}$ median read noise is achieved using line-wise digital correlated double sampling at 700 $\mathrm{kpix/s/ch}$ which corresponds to 1.5 $\mathrm{s}$ readout time. The 15 $\mathrm{k}\mathrm{e^-}$ well capacity in high gain mode is extended to 120 $\mathrm{k}\mathrm{e^-}$ in dual gain mode. Continued collection of photo-generated charge during readout makes possible a further dynamic range extension beyond $10^6\,\mathrm{e^-}$ effective well capacity with only $1\%$ loss of exposure efficiency by combining short and long exposures. A quadratic fit to correct for non-linearity reduces gain correction residuals from $1.5\%$ to $0.2\%$ in low gain mode and to $0.4\%$ in high gain mode. Crosstalk to adjacent pixels is only $0.4\%$ vertically, $0.6\%$ horizontally and $0.1\%$ diagonally. These characteristics plus the relatively large ($10\mathrm{\mu}\mathrm{m}$) pixel size, quasi 4-side buttability, electronic shutter and subarray readout make this sensor an excellent choice for wide field imaging in space, even at FUV wavelengths where sky background is very low.
T. Greffe, R. Smith, M. Sherman, et. al.
Mon, 6 Dec 21
26/61
Comments: 37 pages, 24 figures, 3 tables